Stress evolution during self-annealing of methanesulfonate bath electroplating Cu for TSV

摘要：

Through silicon via (TSV) is a high performance technique to create 3D packages and 3Dintegrated circuits, compared to alternatives such as packageon-package, because the density of via is substantially higher. The correlation of stress and texture evolution during self-annealing of copper electrodeposited from TSV filling methanesulfonate bath has been studied by Surface Profiler, X-ray diffraction (XRD) and Scanning electron microscope (SEM). Methanesulfonate bath is first used in correlative research. We show that addition of different organic additives can strong affect the stress and texture of electrodeposited cupper films. The XRD patterns of copper films reveal the presence of (1 1 1), (2 0 0), (2 2 0), and (3 11) peaks, intensity of which is connect with the concentration of the electroplated bath and the organic additives in the plating bath.

作者: Xue Feng Liming Gao Ming Li

作者单位: Lab of Microelectronic Materials & Technology, State Key Laboratory of Metal Matrix Composites School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China

会议类型: 国际会议

会议名称: 2011 International Symposium on Advanced Packaging Materials(2011年先进电子封装材料国际会议APM)

会议地点: 厦门

会议语种:英文

页码: 456-461

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）