Design of 300W SiC Wide Band Gap Power module
In this paper, the feature of SiC WBG semiconductor is introduced. Compared with Si and GaAs semiconductor, SiC WBG power devices have excellent performance of output power, power density, operating frequency, operating bandwidth and so on. The SiC WBG semiconductor has been used to power module, which is used at 0.8～1.4 GHz of P-band. The output power is 300 W. Firstly, the total frame and main functions are constructed. Secondly, the key techniques in the circuit are simulated and optimized, which include wide-band divider/combine and power amplifier. Furthermore, simulation results and circuits layout are deeply analyzed. Finally, figures and test data of amplifiers are also presented. SiC WBG power devices can operate in CW or pulse mode, as single amplifier or basic amplifying unit of power amplifier module in radar.
SiC power device power module wide band gap(WBG) divider/combine
Yi Zhang Zhenkun Yu
Nanjing Research Institute of Electronics Technology, Nanjing, China, 210039
国际会议
2011 IEEE CIE International Conference on Radar(2011年IEEE国际雷达会议RADAR 2011)
成都
英文
261-264
2011-10-24（万方平台首次上网日期，不代表论文的发表时间）