Study on the Growth of Crystalline Er2O3 Films on Si Substrates by RHEED Patterns

摘要：

Er2O3 films with good crystallinity have been achieved on an oxidized Si (111) surface by molecule beam epitaxy. The initial growth of Er2O3 films epitaxially grown on Si surfaces is investigated by in situ reflection high energy electron diffraction. An interface layer was formed at the very beginning of the growth of Er2O3 film on Si, which is supposed to be attributed to the Er atom catalytic oxidation effect. The results obtained indicate that with the film growth process continued, oxygen deficient Er oxide captures oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is insufficient at a high substrate temperature such as 700°Cin our case.

关键词： erbium oxide epitaxial growth interface structures

作者: Yanyan Zhu Run Xu Zebo Fang

作者单位: Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090,China School of Material Science and Engineering, Shanghai University, Shanghai 200072, China Department of Physics, Shaoxing University, Shaoxing 312000, China

会议类型: 国际会议

会议名称: Fourth International Conference on Advanced Design and Manufacturing(第四届先进设计与制造国际会议)

会议地点: 昆明

会议语种:英文

页码: 163-166

在线出版日期: 2011-09-21（万方平台首次上网日期，不代表论文的发表时间）