CHARACTERISTICS OF NITROGEN-DOPED ANTIMONY TELLURIDE THIN FILMS FOR PHASE-CHANGE RANDOM ACCESS MEMORY

摘要：

The nitrogen-doped Sb2Te3 thin films with the variation of nitrogen concentration of 0-7％ weTe prepared by radio-frequency (rf) magnetron sputtering method.Nitrogen doping effect on the electrical properties and structure of Sb2Te3 thin film was investigated.It was found that nitrogen doping significantly increases the crystallization temperature and resistivity of Sb2Te3 film.The rootmean-square (rms) roughness values of the films evaluated by atomic force microscopy (AFM) showed an obvious decrease with nitrogen doping.Compared with the conventional Ge2Sb2Te5 (GST) film, nitrogen-doped Sb2Te3 films exhibit lower melting temperature and more better data retention, which is beneficial to low power consumption applications of phase-change random access memory (PCRAM).

关键词： Sb2Te3 Nitrogen doping Electrical properties PCRAM

作者: SUYUAN BAI CHANGZHOU WANG ZHENAN TANG ZHENGXING HUANG

作者单位: School of Materials Science and Engineering,Dalian University of Technology School of Physics and El Functional Materials Research Laboratory,Tongji University School of Electronic Science and Technology,Dalian University of Technology

会议类型: 国际会议

会议名称: 3rd International Conference on Mechanical and Electrical Technology(ICMET2011) (2011第三届机械与电气技术国际会议)

会议地点: 大连

会议语种:英文

页码: 335-339

在线出版日期: 2011-08-26（万方平台首次上网日期，不代表论文的发表时间）