Plasma Chemical Etching of Silicon in Chlorine to Containing Plasma, Used in Nanoelectronics

摘要：

It is experimentally confirmed that transition a topoki-netic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF2Cl2/O2. The load effect is studied. Results of article well correlate with the data received in the reactor of high density plasma TCP 2300 Versys Kiyo LAM Research corporations.

关键词： nanoelectronics plasma etching silicon

作者: B. K. Bogomolov

作者单位: Novosibirsk State Technical University Novosibirsk,Russia

会议类型: 国际会议

会议名称: The 6th International Forum on Strategic Technology(IFOST 2011)(第六届国际战略技术论坛)

会议地点: 哈尔滨

会议语种:英文

页码: 205-210

在线出版日期: 2011-08-22（万方平台首次上网日期，不代表论文的发表时间）