A 18GHz to 27 GHz Low Noise Amplifier With Improved TSMC Inductor Module

摘要：

This paper presents a wideband low noise amplifier by using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 urn CMOS process for K-Band application. We use active diode to improve linearity, and improve TSMC inductor module by advanced design system momentum. The measurement results show that the input return loss is less than -8 dB, output return loss is less than -13.4 dB, the gain is 4.8 dB, the minimum noise figure is 4.1 dB, and the power consumption is 16.4 mW. The die area including pads is 0.75 mm2.

关键词： Low Noise Amplifier TSMC 0.18 um Process

作者: Pou-Tou Sun Yu-Hsuan Hsiao Ssu-Chieh Chan Ying-jui Chuang

作者单位: Wireless Communication Laboratory Department of Communications Engineering, Feng-Chia University. No. 100, Wunhua Rd., Situn Dist., Taichung City 40724, Taiwan

会议类型: 国际会议

会议名称: 2011 cross Strait Quad-Regional Radio Science and Wireless Technology Conference(CSQRWC 2011)(2011年海峡两岸四地无线电科技研讨会)

会议地点: 哈尔滨

会议语种:英文

页码: 644-647

在线出版日期: 2011-07-26（万方平台首次上网日期，不代表论文的发表时间）