A Novel Variable Inductor Using A Triple Transformer and MOS Switches in 0.13 μm CMOS Technology

摘要：

This paper presents a novel variable inductor consisting of a triple transformer, pMOSFET switches and a level shift circuit in 0.13 μm CMOS technology. The structure of the variable inductor is designed and analyzed by using Ansoft HFSS. The inductance varies from 0.678 nH to 1.055 nH with changing a control voltage from 0 to 1.5 V. The quality factor of the variable inductor is around 7 at 3.4 GHz.

作者: Jiangtao Sun Shihai He Xuewen Zhu Qing Liu Toshihiko Yoshimasu

作者单位: Graduate School of Information, Production and Systems, Waseda University, JAPAN

会议类型: 国际会议

会议名称: 2011 China-Japan Joint Microwave Conference(2011年中日微波会议CJMW 2011)

会议地点: 杭州

会议语种:英文

页码: 296-299

在线出版日期: 2011-04-20（万方平台首次上网日期，不代表论文的发表时间）