A 10.4 dBm IIP3, 21 GHz LNA for K-band Receiver Front-end

摘要：

A fully integrated 21 GHz LNA with 10.4 dBm IIP3 is presented in this paper. The LNA is composed of 2 common-source stages and fabricated through standard 0.18 um CMOS technology. By optimizing the gate-bias voltage of NMOS and interstage matching resistance, the linearity is enhanced. Measurement results show that the LNA can get 13.1 dB voltage gain, 5.9 dB NF, less than -10 dB input return loss and 10.4 dBm IIP3 while its power dissipation is 12 mW at 1 V supply voltage. Compared to those published papers, this LNA get the highest linearity at comparative power dissipation.

作者: Baohong Liu Junfa Mao

作者单位: Center for Microwave and RF Technologies,Shanghai Jiao Tong University Shanghai, 200240 China

会议类型: 国际会议

会议名称: 2011 China-Japan Joint Microwave Conference(2011年中日微波会议CJMW 2011)

会议地点: 杭州

会议语种:英文

页码: 413-416

在线出版日期: 2011-04-20（万方平台首次上网日期，不代表论文的发表时间）