Selection of Emitter Ballast Resistance Using Ic-Vbe Fly-back Characteristic in Bipolar Transistors
In this paper, the Ic-Vbe characteristic of bipolar transistors are described by novel analytical formulations, which for the first time present the expression of collect current in the second fly-back point. Through the analytical formulations, it is found that a smaller emitter ballast resistance can make the collector current achieve the second flyback point before transistors are burned-out, and then returns to a stable situation. Such an emitter ballast resistance is beneficial to both of the output power and thermal stability at the same time. The experiment result also verifies our conclusions.
Chen Liang ZhaoXin Zhang Wan-rong Jin Dong-yue Xie Hong-yun Ding Chun-bao Ju Jia-xin Wang Ren-qing Xiao ying Fu Qiang
College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
国际会议
2011 China-Japan Joint Microwave Conference(2011年中日微波会议CJMW 2011)
杭州
英文
437-439
2011-04-20（万方平台首次上网日期，不代表论文的发表时间）