Forward Block Characteristic of a Novel Anti-ESD RF SOI LIGBT with a Buried P-type Layer

摘要：

A novel anti-ESD RF SOI LIGBT with buried P-type layer (BPL) was proposed for improvement of its forward block characteristic. The proposed anti-ESD BPL RF SOI LIGBT consists of an additional buried Ptype layer inserted between buried oxide layer and Ndrift region based on the conventional RF SOI LIGBT structure and a built-in self-ESD-protection structure introduced in P-well region. When the proposed Device is biased in forward block state, the junction across the interface between N-drift region and buried P-type layer is reverse biased, which bears the most part of the vertical forward voltage drop instead of thick BOX. It was proved by process and device simulations with Silvaco TCAD that the anti-ESD BPL RF SOI LIGBT is benefit not only to improve its breakdown voltage without increasing the length of drift region but also to thin the thickness of its buried oxide and alleviate the effect of selfheating.

关键词： buried P-type layer (BPL) RF SOI LIGBT forward block thin buried oxide

作者: H. P. Zhang R. S. Qi W. L. Zhao H. F. Zhang G.H. Liu D. J. Wang X.Y. Niu M. Lin L.Y. Xu

作者单位: Key Laboratory of RF Circuit & System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, Key Laboratory of RF Circuit & System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engine

会议类型: 国际会议

会议名称: 2011 China-Japan Joint Microwave Conference(2011年中日微波会议CJMW 2011)

会议地点: 杭州

会议语种:英文

页码: 454-457

在线出版日期: 2011-04-20（万方平台首次上网日期，不代表论文的发表时间）