An Improved Nonlinear Model for InP/InGaAs HBTs

摘要：

An empirical DC to high frequency equivalent circuit model for InP HBTs is presented in this paper. The model takes into account the dc soft-knee effect, bias-dependent extrinsic and intrinsic base-collector capacitances. This modeling methodology is successfully applied to predict dc, small-signal Sparameters for an InP/InGaAs HBT.

作者: Jianjun Gao Jiali Cheng Shoulin Li Huang Wang Bo Han

作者单位: School of information science and technology, East China Normal University, Shanghai, 200062, P.R.China

会议类型: 国际会议

会议名称: 2011 China-Japan Joint Microwave Conference(2011年中日微波会议CJMW 2011)

会议地点: 杭州

会议语种:英文

页码: 622-624

在线出版日期: 2011-04-20（万方平台首次上网日期，不代表论文的发表时间）