Growth Kinetics and Microstructure of Siliconized Layer by Molten Salt Electrodeposition

摘要：

The siliconized layers were formed on the surface of hot rolled grain oriented silicon steel using a molten salt pulse electrodeposition method. The process was performed in the temperature range 10231123 K and with varying deposition time (60-180 min). The profile distribution of Si in the siliconized layer was measured using the glow discharge spectrometry (GDS) and the depth from the surface to the substrate was taken as the layer thickness. The morphology and structure were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that a longer deposition time tended to produce a larger grain and a looser, rougher layer. The phase structure of the layer was composed of Fe3Si with (110) preferred orientation in the experimental range. The longer deposition time resulted in an increase in thickness layer and the thickness of the layers ranged from 17 to 165um. Kinetic studies showed that the siliconized layer grew with a parabolic rate law, indicating the diffusion controlled growth. The activation energy for growth of siliconized layer was about 242 kJ/mol.

关键词： Growth kinetics Microstructure Siliconized layer Electrodeposition

作者: Haili Yang changwei Cui Yungang Li Guozhang Tang uzhu Zhang

作者单位: Hebei key Laboratory of Modern Metallurgy Technology,College of Metallurgy and Energy,Hebei Polytech Hebei key Laboratory of Modern Metallurgy Technology,College of Metallurgy and Energy,Hebei Polytech

会议类型: 国际会议

会议名称: the 2011 International Conference on Key Engineering Materials(ICKEM 2011)(2011关键工程材料国际会议)

会议地点: 三亚

会议语种:英文

页码: 434-438

在线出版日期: 2011-03-25（万方平台首次上网日期，不代表论文的发表时间）