Phonon Modes in AIGaN Alloy with AIGaN/GaN MQW Interlayer

摘要：

500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detector and resonant tunneling diodes by MOCVD equipment. We were strongly interesting in the stress information of QW. There are a big mismatch of lattice between A1N and GaN.The growth of thick and high quality AlGaN is difficult task. AlGaN/GaN MQW layers were designed to relax the big mismatch stress. Many researcher focused on the stress relax mechanism for the growth of AlGaN alloy. The stress in QW can change the band gap structure and carrier contents of polarize induced charge. Raman spectra were a useful tool to observe the stress of semiconductor materials without damaging the sample. Using 514nm green laser, we only obtained the phonon modes of GaN. So applying 325nm Ar ion laser, we can observed the phonon modes spectra of both AIGaN and GaN layers. According to resonance conditions, the phonon modes of 789.74 cm-1 was origin from AlGaN alloy layer. The phonon modes of 740.89 cm-1 and 575.06 cm-1 were origin from GaN layer. Compared to other results, GaN layer was compress strain. We determined that AlGaN/GaN MQW interlayer relaxed strain stress from lattice mismatch, and phonon modes were clearly observed.

关键词： Phonon modes AIGaN alloy AIGaN/GaN MQW strain stress

作者: Jin Zhou Yufeng Jin Enguang Dai Zhijian Yang Bo Shen

作者单位: Department of Microelectronics,Peking University,100871,P. R. China School of Electronics Engineering and Computer Science,Peking University,100871,P. R.China School of Physics,Peking University,100871,P. R. China

会议类型: 国际会议

会议名称: the 2011 International Conference on Key Engineering Materials(ICKEM 2011)(2011关键工程材料国际会议)

会议地点: 三亚

会议语种:英文

页码: 526-530

在线出版日期: 2011-03-25（万方平台首次上网日期，不代表论文的发表时间）