The Range Distribution of Nd Ions Implanted in Silicon Crystal

摘要：

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 200-500 keV Nd ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2006) predictions. Our results show that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; for the range straggling △Rp, the difference between the experiment data and the calculated results is much higher than that of Rp.

关键词： neodymium ion implantation projected range range straggling Rutherford backscattering technique

作者: Xifeng Qin Shuang Li Fengxiang Wang Yi Liang

作者单位: School of Science,Shandong Jian Zhu University,Jinan 250101,China

会议类型: 国际会议

会议名称: the 2011 International Conference on Key Engineering Materials(ICKEM 2011)(2011关键工程材料国际会议)

会议地点: 三亚

会议语种:英文

页码: 593-596

在线出版日期: 2011-03-25（万方平台首次上网日期，不代表论文的发表时间）