Electrical and optical characteristics simulation of GaN/AlGaN p-i-n Avalanche photodiode

摘要：

We report the epitaxial growth, fabrication, electrical and optical characteristics of GaN/AlGaN p-i-n avalanche photodiodes. The effects of polarization charge density on the dark current and the spectral responsivity of GaN/AlGaN p-i-n avalanche photodiodes are investigated in detail.

关键词： GaN/AlGaN p-i-n avalanche diodes polarization charge density dark current numerical simulation

作者: Xiaodong Wang Weida Hu Xiaoshuang Chen Wei Lu

作者单位: National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai,China 200083

会议类型: 国际会议

会议名称: 2011 3rd IEEE International Conference on Computer Research and Development(ICCRD 2011)(2011第三届计算机研究与发展国际会议)

会议地点: 上海

会议语种:英文

页码: 279-281

在线出版日期: 2011-03-11（万方平台首次上网日期，不代表论文的发表时间）