Design and analysis of a high-performance sense amplifier for Phase-Change Memory

摘要：

This paper presents a high-performance sense amplifier and its operation method for phase change memory (PCM). The proposed structure includes precharge circuit, judgment circuit, bias circuit and discharge circuit. Correspondingly, the read process includes four steps of pre-charging, relaxing, sensing and discharging. Simulation results show that the proposed sense amplifier can read out the cell status efficiently in 180ns both at low resistance (10K ohm) and high resistance (100K ohm) with the parasitic capacitance of 20pF. It will be used in 40nm lGbit phase change memory chip.

关键词： phase change memory sense amplifier IC

作者: LI Xi CHEN Hou-Peng SONG Zhi-Tang

作者单位: State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences Shanghai,China

会议类型: 国际会议

会议名称: 2011 3rd IEEE International Conference on Computer Research and Development(ICCRD 2011)(2011第三届计算机研究与发展国际会议)

会议地点: 上海

会议语种:英文

页码: 318-321

在线出版日期: 2011-03-11（万方平台首次上网日期，不代表论文的发表时间）