A Novel Low-Ripple Charge Pump for PCM

摘要：

A switched capacitor charge pump applicable to phase change memory(PCM) is presented, which can provide a extra low ripple DC output of SV with a maximum load condition of 10mA. For low output ripple and high power effiency, a novel operation mode is used. Compared with the conventional switched capacitor charge pump, the flying capacitor of the proposed charge pump is charged to Vo-VDD instead of VDD during the charge period(Vo is the prospective output voltage).In the discharge period, the flying capacitor is placed in series with the VDD to transfer energy to output, so the output voltage is regulated at Vo. A simulation was implemented for a DC input range of 2.8-4.4V in a SMIC standard 0.18um CMOS process, the result shows the new operation mode could regulate the output about SV with a load conditon from 0 to 10mA, and the ripple voltage is lower than 3mV. The higest power effiency reaches 88％.

关键词： charge pump DC to DC converter PCM drivers low ripple

作者: FU Cong SONG Zhi-Tang CHEN Hou-Peng DING Sheng

作者单位: State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences Shanghai,China

会议类型: 国际会议

会议名称: 2011 3rd IEEE International Conference on Computer Research and Development(ICCRD 2011)(2011第三届计算机研究与发展国际会议)

会议地点: 上海

会议语种:英文

页码: 322-324

在线出版日期: 2011-03-11（万方平台首次上网日期，不代表论文的发表时间）