Comparison of different MOS-triggered SCR structures for on-chip ESD protection

摘要：

Three types of MOS-triggered SCR structures: Merged MOS-triggered SCR, compact MOS-triggered SCR and boundary-MOS-triggered SCR devices have been fabricated and compared in 0.13pm CMOS process for on-chip ESD protection. TLP testing results show boundary-MOS-triggered SCR structures can achieve adjustable and lower switching voltage, smaller turnon resistance, faster turn-on speed, the best ESD robustness and sufficient latch-up immunity compared with other MOS-triggered SCRs.

关键词： Electrostatic discharge(ESD) Silicon-controlled rectifier(SCR) Transmission line pulse(TLP)

作者: Fei Ma Yan Han Bo Song Shurong Dong Meng Miao

作者单位: ESD Lab,Dept. ISEE Zhejiang University Hangzhou,China

会议类型: 国际会议

会议名称: 2011 3rd IEEE International Conference on Computer Research and Development(ICCRD 2011)(2011第三届计算机研究与发展国际会议)

会议地点: 上海

会议语种:英文

页码: 331-335

在线出版日期: 2011-03-11（万方平台首次上网日期，不代表论文的发表时间）