Surface Potential Based Model for Amorphous IGZO Thin Film Transistors

摘要：

An analytical dc model is presented for amorphous In-Ga-Zn-Oxide (a-IGZO) thin Film transistors on the basis of surface potential calculation by Lambert W equation, assuming an exponential trap states density within the bandgap. Charge sheet approximation is utilized to derive the trapped and free charges. The model results are compared with experimental data and a good agreement is achieved.

关键词： amorphous In-Ga-Zn-Oxide (a-IGZO) thin film transistors(TFTs) surface potential trap states

作者: Hongyu He Huiling Tang Xueren Zheng

作者单位: Faculty of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou,China Faculty of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou,China School of Electronic and Information Engineering South China University of Technology Guangzhou,Chin

会议类型: 国际会议

会议名称: 2011 3rd IEEE International Conference on Computer Research and Development(ICCRD 2011)(2011第三届计算机研究与发展国际会议)

会议地点: 上海

会议语种:英文

页码: 350-352

在线出版日期: 2011-03-11（万方平台首次上网日期，不代表论文的发表时间）