Model of Self-Heating Effect for Undoped Polycrystalline Silicon Thin Film Transistors

摘要：

Analytical drain current expressions with selfheating effect are presented for undoped polycrystalline thin film transistors (poly-Si TFTs). Temperature dependence of threshold voltage and effective mobility is involved. The expressions are derived on the basis of a first order Taylor expansion and continuous from linear regime to saturation regime. The validity of this model is verified by available experimental data and a good agreement is obtained.

关键词： polycrystalline silicon (poly-Si) thin film transistors (TFTs) self-heating effect effective mobility

作者: Qiong Wu Ruohe Yao Hongyu He

作者单位: School of Electronic and Information Engineering South China University of Technology Guangzhou,China

会议类型: 国际会议

会议名称: 2011 3rd IEEE International Conference on Computer Research and Development(ICCRD 2011)(2011第三届计算机研究与发展国际会议)

会议地点: 上海

会议语种:英文

页码: 371-374

在线出版日期: 2011-03-11（万方平台首次上网日期，不代表论文的发表时间）