A Q-Band Common Source Low Noise Amplifier Using 90-nm RF CMOS Process

摘要：

In this paper, a Q-band common source low noise amplifier (LNA) using 90-nm standard RF-CMOS technology is proposed. The design methodologies for millimeter-wave (MMW) amplifiers are discussed. The post layout simulation results show that $,, is lower than -14 dB and S22 is -11 dB at the peak gain of 14.6 dB at 37.5 GHz with 9.4 GHz bandwidth, the minimum noise figure is lower than 5.5 dB, the input P1dB and IIP3 are -15.2 dBm and -6.9 dBm, respectively. The whole circuit draws a DC current of 14 mA from one 1.2 V supply and occupies a layout area of 755 μm × 670 μm.

关键词： broadband Q-band CMOS millimiter-wave(MMW) common source low noise amplifier (LNA) electromagnetic(EM) simulation

作者: Geliang Yang Zhigong Wang Li qin Keping Wang

作者单位: Institute of RF- & OE-ICs Southeast University Nanjing,China Institute of RF- & OE-ICs Southeast University Nanjing,China Division of Circuits & Systems,EEE Nany

会议类型: 国际会议

会议名称: 2011 3rd IEEE International Conference on Computer Research and Development(ICCRD 2011)(2011第三届计算机研究与发展国际会议)

会议地点: 上海

会议语种:英文

页码: 430-433

在线出版日期: 2011-03-11（万方平台首次上网日期，不代表论文的发表时间）