The Modeling of Hydrogen-related Degradation of GaAs Devices during Accelerated Life Tests

摘要：

In this paper, the modeling of hydrogen-related degradation of GaAs devices during accelerated life tests is presented. The modeling of hydrogen diffusion in GaAs crystal is based on Fickian diffusion model and takes the caption and release of hydrogen atoms by donor atoms into consideration. Then the hydrogen diffusion model is coupled with the device model, and the degradation during accelerated life tests is simulated. Based on the modeling above, it is possible to understand the process more accurately and design a compensation circuit to circumvent this hydrogen-related problem.

关键词： Hydrogen diffusion Degradation GaAs devices Accelerated life tests Fickian diffusion model Finite difference method

作者: Yang Chen Zhang Sujuan

作者单位: School of Reliability and Systems Engineering,Beijing University of Aeronautics & Astronautics,Beijing,China

会议类型: 国际会议

会议名称: 2011 3rd International Conference on Computer and Network Technology(ICCNT 2011)(2011第三届IEEE计算机与网络技术国际会议)

会议地点: 太原

会议语种:英文

页码: 446-449

在线出版日期: 2011-02-26（万方平台首次上网日期，不代表论文的发表时间）