Modeling of the Diode for Electromagnetic Compatibility (EMC) based on Saber

摘要：

The diode model for EMC is built on the basis of lumped charge model. The model consists of forward recovery, reverse recovery and carrier recombination and is completed by MAST modeling language in Saber. The simulation results show that this model describes the forward and reverse recovery correctly.

关键词： diode modeling forward and reverse recovery simulation

作者: Yang Tianpeng Ma Qishuang

作者单位: School of Automation Science and Electrical Engineering Beijing University of Aeronautics and Astronautics Beijing,China

会议类型: 国际会议

会议名称: 2011 3rd International Conference on Computer and Network Technology(ICCNT 2011)(2011第三届IEEE计算机与网络技术国际会议)

会议地点: 太原

会议语种:英文

页码: 42-44

在线出版日期: 2011-02-26（万方平台首次上网日期，不代表论文的发表时间）