会议专题

Simulation of Charge Transfer Process in a 2DEG-CCD

This paper describes the modeling and simulation charge transfer process of a 2DEG charge coupled device. We have introduced a new approach to calculate the scattering rate of two-dimensional electron gas in the transport channel of a 2DKG-CCD. This technique was applied to the investigation of the charge transfer process with ensemble Monte Carlo method.

2DEG-CCD charge transfer efficiency charge signal, transit speed stepwise changes

Mehdi. Aliyari Ali. Bozorgmehr

Department of Electrical Engineering, Shahed University Tehran, Iran

国际会议

2011 International Conference on Communication and Electronics Information(ICCEI 2011)(2011年通信和电子信息国际会议)

海口

英文

344-347

2011-02-22(万方平台首次上网日期,不代表论文的发表时间)