Simulation of Charge Transfer Process in a 2DEG-CCD
This paper describes the modeling and simulation charge transfer process of a 2DEG charge coupled device. We have introduced a new approach to calculate the scattering rate of two-dimensional electron gas in the transport channel of a 2DKG-CCD. This technique was applied to the investigation of the charge transfer process with ensemble Monte Carlo method.
2DEG-CCD charge transfer efficiency charge signal, transit speed stepwise changes
Mehdi. Aliyari Ali. Bozorgmehr
Department of Electrical Engineering, Shahed University Tehran, Iran
国际会议
海口
英文
344-347
2011-02-22(万方平台首次上网日期,不代表论文的发表时间)