Base pressure effects on the structure, surface roughness and electrical resistivity of Mo thin films by RF magnetron sputtering
Abstract. Molybdenum (Mo) thin films were deposited on soda-lime glass substrate by using RF magnetron sputtering. As is well known, base pressure in sputtering is a processing parameter for preparing high quality Mo films, in addition to RF power and working pressure. The structure, surface roughness and electrical resistivity of Mo thin films were investigated at three base pressures of 1.8×10-7,5.8× 10-7and 2.7× 10-6 torr. Experimental results indicate that the Mo films deposited at a low base pressure of 1.8 xlO7 torr exhibit a low electrical resistivity of 8.9×10-6Ω -cm, a low root mean square value of roughness of 4.92nm and a stronger peak intensity of (110) plane than that of the other two pressures. This finding suggests that Mo films sputtered at a low base pressure have higher crystallinity, larger grain size, smoother surface morphology and lower electrical resistivity than those sputtered at a high base pressure.
Base pressure Surface roughness Molybdenum (Mo) thin films RF magnetron sputtering
Ming-Jer Jeng Wen-Kai Lei Wei-Lun Ku Liann-Be Chang Ching-Wen Wu Yong-Tian Lu Sung-Cheng Hu
Department of Electronic Engineering and Green Technology Research Center,Chang Gung University, 259 Chemical Systems Research Division, Chung-Sung Institute of Science & Technology,Taoyuan, Taiwan
国际会议
2011 International Conference on Advanced Material Research(ICAMR 2011)(2011年先进材料研究国际会议)
重庆
英文
161-165
2011-01-21（万方平台首次上网日期，不代表论文的发表时间）