HVDC System for a Data Center Equipped with SiC Power Devices
SiC power devices have attracted attention as the next-generation semiconductor devices that surpass silicon devices. The SiC has some superior physical properties when compared with the conventional silicon, and is expected to operate with lower onresistance and under higher temperature. Furthermore the SiC device has higher thermal conductivity and then has the prominent feature of heat dissipation. Among many expected applications of SiC, this paper presents the application to the power supply system for the information and communication system such as a data center. Firstly, the development of a high power-density technology for a 5-kW isolated DC-DC converter using a hybrid-pair of Si-MOSFET and SiCSBD is reported. Secondly, a new type DC circuit breaker using SiC-SIT is introduced.
Tamotsu Ninomiya Akiyoshi Fukui Masato Mino Mikio Yamasaki Yasunori Tanaka Hiromichi Ohashi
Nagasaki University, Nagasaki, Japan NTT Facilities Inc., Tokyo, Japan NTT Facilities Research Institute Inc., Tokyo, Japan National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
国际会议
西安
英文
421-426
2011-10-23（万方平台首次上网日期，不代表论文的发表时间）