Residual Voltage Caused by Grain Boundary in ZnO Varistor Ceramics

摘要：

The residual voltage of ZnO varistor ceramics is not only determined by grain resistance but also by the process of grain boundary breakdown. Al-doped ZnO varistor ceramics were prepared on the basis of traditional composition by the solid stated method. The current-voltage characteristics (I-V), dielectric spectroscopy of the samples were measured and the grain boundary micro-parameters were calculated, including the height and width of the Schottky barrier, the carrier concentration and so on. It was indicated that the barrier height plays a major role in determining grain boundary residual voltage. From this point, the grain boundary residual voltage can be decreased by controlling the grain boundary barrier through adjusting the concentration of intrinsic defects with doping method.

作者: Wang Hui Li Shengtao Li Jianying

作者单位: State Key Laboratory of Electrical Insulation and Power Equipment, Xian Jiaotong University, Xian, Shaanxi, China

会议类型: 国际会议

会议名称: 2011 1st International Conference on Electric Power Equipment-Switching Technology(第一届电力设备开断技术国际会议 ICEPE)

会议地点: 西安

会议语种:英文

页码: 666-669

在线出版日期: 2011-10-23（万方平台首次上网日期，不代表论文的发表时间）