Study on the Change of nm NMOS Inversion Channel Electron Mobility caused by Strained Si/SiO2 Interface
This paper focuses on considering how the strained Si/SiO2 interface scattering mechanisms influences mobility. Then a comprehensive Semi-empirical model for inversion channel electron mobility of strained Si NMOS is proposed. The model considers the ordinary scattering mechanism, as well as interface carrier scattering such as interface charge scattering and interface roughness scattering, where the interface-charge scattering mechanism includes electrically-shielded effect of carriers. Finally, the fitting results by Matlab and experiment data have a very good match. The model can be used to study and analyze influences of interface characteristics on electron mobility and is also a basis of circuit simulations in the future.
Hu Hui-Yong Wang Tian-Jiao Zhang He-Ming Xuan Rong-Xi Xu Li-Jun
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
国际会议
长春
英文
1-4
2011-08-29（万方平台首次上网日期，不代表论文的发表时间）