Study on C-V Characteristics of nm Strained Si MOS

摘要：

In this paper, the physical models for the typical nm strained Si MOS structure are given under different voltage. The strained Si MOS capacitance-voltage characteristics are simulated using this physical model, The results show that the C-V curves of strained Si MOS appear a step phenomenon in the inversion region or depletion region. This step phenomenon changes with variation of strained Si layer doping concentration. The model can be used to study and analyze influences of doping concentration on C-V characteristics and is also a basis of circuit simulations in the future.

作者: Song Jian-Jun Wang Tian-Jiao Zhang He-Ming Hu Hui-Yong Xun Rong-Xi Qu Jiang-Tao

作者单位: Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University,Xi’an, China

会议类型: 国际会议

会议名称: The First International Conference on Manipulation,Manufacturing and Measurement on the Nanoscale(第一届3M-NANO国际会议)

会议地点: 长春

会议语种:英文

页码: 1-4

在线出版日期: 2011-08-29（万方平台首次上网日期，不代表论文的发表时间）