Fabrication Of Nano-Scale Ge-Sb-Te Phase Change Memory Cell Using Tungsten Nano-Patterns Deposited By The Focus Ion Beam System As Hard Mask

摘要：

Nano-scale Tungsten patterns were created within a scanning electron microscope through electron-beam-induced deposition. The tungsten patterns were used as a reactive ion etching hard mask to fabricate phase change material nanoparticle arrays. The diameter of the phase change nanoscale structure is 38.5 nm. The nanoprobes were used to measure the electrical characteristics of the Ge2Sb2Te5 nanopillar. A 2 V pulse, (pulse width 28 ns, pulse trailing 3 ns) was applied to the initially crystalline phase GST nano-pillar to bring about its amorphization. The amorphous state was brought back to crystalline state by applying 2.3 V set pulse (pulse width 50 ns).

作者: Shilong Lv Zhitang Song Liangcai Wu Weijia Xue

作者单位: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

会议类型: 国际会议

会议名称: The First International Conference on Manipulation,Manufacturing and Measurement on the Nanoscale(第一届3M-NANO国际会议)

会议地点: 长春

会议语种:英文

页码: 1-4

在线出版日期: 2011-08-29（万方平台首次上网日期，不代表论文的发表时间）