Crystal-silicon Nanobeam Integrated with PNP junction and Its Electronic Property
(0) 100nm thick, 4.65μm wide, and 20μm long crystal-silicon nanobeam is fabricated on the top silicon of N-type SOI wafer by traditional MEMS technology. PNP junction is formed on the beam by selective boron doping. P-channel air gap thin film transistor (TFT) is obtained after the oxide layer under the beam removed, with the PNP junction as drain, channel and source, and the substrate of the SOI wafer as gate. Such air-gap TFT can be used for vibration detection of the nanobeam. The electronic property of the as-released air gap TFT is very poor. After treated in O2 and N2 plasma for 5 minutes, the property is significantly improved. Some interesting phenomena are observed, including the on current of the device after treatment is about 10 times higher than the device before released and negative resistance phenomenon.
Huiquan Wang Junyi Yang Sheping Yan Zhonghe Jin Yuelin Wang
Zhejiang University, Hangzhou, China.310027 Shanghai Institute of Microsystem and Information Technology, Shanghai, China, 200050
国际会议
长春
英文
1-3
2011-08-29（万方平台首次上网日期，不代表论文的发表时间）