Inter Valley Phonon Scattering Mechanism in Nano Scale Strained Si /(101)Si1-xGex Film

摘要：

Inter valley scattering have a great impact on carrier mobility of strained Si materials, So based on Fermis golden rule and the theory of Boltzmann collision term approximation, inter valley phonon scattering mechanism of electron in nano scale strained Si (101) materials was established under the influence of both energy and stress. It shows that inter valley phonon f2、f3、g3 scattering rate decrease markedly in nano scale strained Si (101) materials with increasing stress. The quantized models can provide valuable references to the understanding on strained Si materials and the research on electron carrier mobility.

作者: Jianjun Song Shuai Lei Heming Zhang Huiyong Hu Rongxi Xuan

作者单位: School of Microelectronics, Xidian University, Xi’an, China

会议类型: 国际会议

会议名称: The First International Conference on Manipulation,Manufacturing and Measurement on the Nanoscale(第一届3M-NANO国际会议)

会议地点: 长春

会议语种:英文

页码: 1-4

在线出版日期: 2011-08-29（万方平台首次上网日期，不代表论文的发表时间）