Strain Effect on Electron Scattering in Nano Scale Strained Si1-xGex (101) Film
Electron scattering is one of two key factors of electron mobility, so based on Fermis golden rule and the theory of Boltzmann collision term approximation, we focus on the effect of strain on scattering rate in Si1-xGex (101) film epitaxial grown on relaxed Si and then establish a theoretical model which include ionized impurity, acoustic phonon, inter-valley phonon and alloy disorder scattering rate models. The enhancement of carrier mobility in strained Si materials is highly correlated with the scattering rate. The quantized models can provide valuable references to the understanding on strained Si materials and the research on electron carrier mobility.
Huiyong Hu Shuai Lei Heming Zhang Rongxi Xuan Bin Shu Tianjiao Wang
School of Microelectronics, Xidian University, Xi ’an, China
国际会议
长春
英文
1-4
2011-08-29（万方平台首次上网日期，不代表论文的发表时间）