Thin Layer SOI-FET Used for Stress-Sensing and Its Application in Accelerometer

摘要：

In this paper, double-clamped beams with masses at the centre of the beam have been fabricated on the substrate of SOI wafer. Thin layer Silicon-on-Insulator Field-Effect Transistors (SOI-FETs) have been integrated at the end of the beams on the top layer of the SOI wafer. The thin layer FET can be used for stress-sensing. Such structure can be used as an accelerometer. The input acceleration can be detected directly by the changing of the drain current. The measured sensitivity and noise base of the device are 0.91 mV/g and 13 mg/Hz-1/2. As expected of the performance of the SOI-FET, such an accelerometer can be used in a wide temperature range (-60 ℃ to 200 ℃) in some special applications.

作者: Junyi Yang Huiquan Wang Sheping Yan Zhonghe Jin

作者单位: Zhejiang University, Hangzhou, 310027, China

会议类型: 国际会议

会议名称: The First International Conference on Manipulation,Manufacturing and Measurement on the Nanoscale(第一届3M-NANO国际会议)

会议地点: 长春

会议语种:英文

页码: 1-4

在线出版日期: 2011-08-29（万方平台首次上网日期，不代表论文的发表时间）