Study On Ge2Sb1.5Bi0.5Te5: An Inorganic Photoresist Possessed Both Positive And Negative Resist Characteristics

摘要：

In this paper, phase change material Ge2Sb1.5Bi0.5Te5 (GSBT) is studied as an inorganic photoresist. The experimental results show that amorphous state and crystalline state of the material, which can be produced easily by a laser direct writing (LDW) system, have very different etching characteristic. The GSBT can act as both positive and negative photoresist through development in different developing solution. Moreover, reactive ion etching technology was applied to transfer formed patterns and structures onto the SiO2 substrate.

作者: Xi Hongzhu Liu qian Zhang gengmin

作者单位: National Center for Nanoscience and Technology, China, No.11, Beiyitiao, Zhongguancun, Beijing, 1001 National Center for Nanoscience and Technology, China, No.11, Beiyitiao, Zhongguancun, Beijing, 1001 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R.China

会议类型: 国际会议

会议名称: The First International Conference on Manipulation,Manufacturing and Measurement on the Nanoscale(第一届3M-NANO国际会议)

会议地点: 长春

会议语种:英文

页码: 1-4

在线出版日期: 2011-08-29（万方平台首次上网日期，不代表论文的发表时间）