Micromachining of Single Crystalline Silicon Nanowires on (111) Silicon Wafers
This paper reports a unique top-down fabrication method of single crystalline silicon nanowires (SiNWs) on (111) silicon wafers. Only conventional microfabrication processes of oxidations, standard photolithography, ion-beam etching, and wet anisotropic etching are required. The processed SiNWs are <110>-oriented with lateral dimensions of ~25nm and lengths of 4 microns. The design, processing and formation mechanism are presented and discussed.
Qinhua Jin Tie Li Yuelin Wang
State Key laboratories of Transducer Technology, National Key Laboratory of Microsystem Technology, SIMIT, Chinese Academy of Sciences, Shanghai , China
国际会议
长春
英文
1-4
2011-08-29(万方平台首次上网日期,不代表论文的发表时间)