Non-linear Process Model for CMP-APC
For Si dioxide-film CMP process in semiconductor manufacturing, which requires high precision, run-to-run control has been developed. The run-to-run control is a kind of repetitive control to adjust polishing time at every start of work in a work sequence. This control is based on a process model, which expresses the relation between polishing time and polished thickness. The model is non-linear for Si dioxide-film CMP with Ceria slurry and it contains many parameters. However the parameters must be determined by product type. Therefore, a modeling method of nonlinear process models is developed for multi-product high-volume manufacturing. In this method, model is determined by selecting the optimum combination of arbitrary terms, whose parameter values satisfy constraints of non-linear polishing process. The result shows that the model can be selected using more than 10 samples. Calculated polishing time achieves high precision in film-thickness after CMP. The standard deviation of film-thickness after CMP is less than 1% of target film-thickness.
Toshihiro MORISAWA Hiromichi KOBAYASHI Yukio TAKEDA
Production Engineering andResearch Lab., Hitachi, Ltd.Yokohama, Kanagawa, Japan Saijo Wafer Process Mfg.Tech.Dept, Renesas Electronics Corp.Hiuchi,Ehime,Japan Tokyo Institute of Technology Meguro, Tokyo, Japan
国际会议
International Conference on Management and Service Science(2011年第五届管理与服务科学国际会议 MASS 2011)
武汉
英文
1-4
2011-08-12（万方平台首次上网日期，不代表论文的发表时间）