Fabrication of Integrated Microwave Passive Devices Using Thick BCB as Dielectric at Wafer Level
This paper presents a wafer-level integration technology of micro/millimeter-wave integrated passive devices utilizing thick photo-BCB layer as dielectrics. Maximum three layers of metal and two layers of BCB are included in the specimen. Several kinds of RF integrated passive devices (IPDs) such as microwave resonator, low-pass filter (LPF) as well as band-pass filter, are fabricated on 25um/layer thick dielectrics. The RF transmission performances are measured on wafer. The S11 and S21 of the λ0/4 resonator are -0.774dB and -25.48dB, and the S11 and S21 of the stepped impedance resonator achieve -0.394dB and -27.42dB respectively at 24GHz. The cut-off frequency of the low pass filter is measured to be 13 GHz. The measured pass-band range of the BPF is 13.15GHz~13.75 GHz where the return loss is better than 11dB. The pole point appears at 13.4GHz, and the return loss is 18.4dB.
Jiajie Tang Xiao Chen Xiaowei Sun Le Luo
Shanghai Institute of Microsystem and Information Technology,No.865 Changning Road, Shanghai, CAS 20 Shanghai Institute of Microsystem and Information Technology,No.865 Changning Road, Shanghai, CAS 20 Shanghai Institute of Microsystem and Information Technology, No.865 Changning Road, Shanghai, CAS 2
国际会议
上海
英文
68-71
2011-08-08（万方平台首次上网日期，不代表论文的发表时间）