Fabrication and in-situ evaluation of Copper TSV Interconnection

摘要：

In this paper, a process for making copper Though-Silicon-Via (TSV) interconnection is developed. In order to improve the yield of the process, challenging issues in the process is discussed and typical failures in the TSV interconnection are summarized. A measuring scheme is proposed to monitor these failures in the process and simulation is performed to testify the feasibility of the method.

作者: Shenglin Ma Yunhui Zhu Xin Sun Min Miao Jin Chen Yufeng Jin

作者单位: National Key Laboratory on Micro/Nano Fabrication technology, Peking University, Beijing, China, 100 National Key Laboratory on Micro/Nano Fabrication technology, Peking University, Beijing, China, 100

会议类型: 国际会议

会议名称: 2011 12th International Conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

会议地点: 上海

会议语种:英文

页码: 114-117

在线出版日期: 2011-08-08（万方平台首次上网日期，不代表论文的发表时间）