Nanoprecision Aligned Wafer Direct Bonding and Its Outlook
A nanoprecision aligned wafer bonding is presented enabling creating innovative nanostructures. To achieve high-precision wafer bonding, a perfect alignment as well as room-temperature bonding process is necessary. In this paper, the limit of typical alignment methods is addressed firstly and a moiré fringe assisted alignment method is developed to breakthrough the limit. Moreover, in order to realize room-temperature bonding without heating, a fluorine containing plasma activation is developed to combine silicon and silicon oxide wafers in air. On the other hand, a process flow consisting of the precise alignment and room-temperature bonding processes with in-situ strategy is demonstrated to realize the nanoprecison aligned wafer bonding. The proposed strategy provides one of possible solutions for development of aligned wafer bonding tools, which will open up opportunities in 3D integration circuits, 3D photonic crystals, and advanced nanotransistors.
Chenxi Wang Tadatomo Suga
School of Engineering, The University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
国际会议
上海
英文
137-140
2011-08-08（万方平台首次上网日期，不代表论文的发表时间）