Properties of Ferroelectric Thin Film Capacitor for Embedded Passive Applications
BaTiO3/Ba0.6Sr0.4TiO3/SrTiO3 (BT/BST/ST, as one periodic structure) multilayer thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. Platinum electrodes were then patterned on the films by sputtering and lithographic process to form metal-ferroelectric-metal (MFM) capacitors. The multilayer thin films were crack free, compact and crystallized in perovskite structure. The crystallization temperature was between 600ⅹC and 650ⅹC. The dielectric constant of the multilayer films was significantly higher than that of individual uniform films of BaTiO3, SrTiO3 or Ba0.6Sr0.4TiO3 of similar thickness. The multilayer thin films showed excellent dielectric and electric properties that make them promising candidates for the dielectric layer of embedded capacitor in package substrate in a discrete format. Within the entire test range of frequencies, the capacitance of all samples remained at the level of several nF. The breakdown voltage of the MFM capacitors was measured to be greater than 27 V.
Ning Zhao Lixi Wan Shuhui Yu
Institute of Microelectronics, Chinese Academy of Sciences.3 Beitucheng West Road, Chaoyang District Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences.1068 Xueyuan Avenue, Shenzhen
国际会议
上海
英文
264-267
2011-08-08（万方平台首次上网日期，不代表论文的发表时间）