Multi-Physics Computer Simulation of the Electromigration Phenomenon

摘要：

Previous works on electromigration in microelectronics devices have been reviewed, and a multi-physics EM simulation method that combines electric, thermal, atomic diffusion, and stress analysis has been described. The proposed method can be used to predict the atomic vacancy concentration distribution and void formation in metals or alloys that are subject to current loading.

作者: Xiaoxin Zhu Hiren Kotadia Sha Xu Hua Lu Samjid H.Mannan YC Chan Chris Bailey

作者单位: School of Computing and Mathematical Sciences, University of Greenwich,30 Park Row, London SE10 9LS, Physics Department, School of Natural & Mathematical Sciences, Kings College London,Strand, London Department of Electronic Engineering, City University of Hong Kong,83 Tat Chee Avenue, Kowloon Tong, Department of Electronic Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong

会议类型: 国际会议

会议名称: 2011 12th International Conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

会议地点: 上海

会议语种:英文

页码: 448-452

在线出版日期: 2011-08-08（万方平台首次上网日期，不代表论文的发表时间）