3D Modeling and Electrical Characteristics of Through-Silicon-Via (TSV) in 3D Integrated Circuits

摘要：

solutions is 3D chip stacking using TSV. The authors of this paper propose an equivalent circuit model of TSV and extract the values of passive elements within the model from fullwave scattering parameters simulation. Then, in order to estimate the signal distortion, the eye-diagram and TDR simulation are made and demonstrated. Additionally, transmission performance and the crosstalk of differential TSV with redistribution layer (RDL) are explored. The design rules for optimized crosstalk performance for TSVs with RDL are put forward.

作者: Lei Liang Min Miao Zhensong Li Shufang Xu Yuexia Zhang Xiaoqing Zhang

作者单位: Information Microsystem Institute, Beijing Information Science and Technology University.No.35, North Fourth Ring Road, Chao Yang District, Beijing 100101, P.R.China

会议类型: 国际会议

会议名称: 2011 12th International Conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

会议地点: 上海

会议语种:英文

页码: 471-475

在线出版日期: 2011-08-08（万方平台首次上网日期，不代表论文的发表时间）