Simulation Studies on PECVD SiO2 Process Aiming at TSV Application
A simulation for studying the process of plasma enhanced chemical vapor deposition (PECVD) technology, which is a key process in through-silicon-via (TSV) technology, is proposed in this paper. Elementary models (including ions and neutral particles direct incidence, re-emission and so on) corresponding to the mechanism of PECVD are included, which contributes to the morphology of SiO2 film deposition. By selecting proper parameters of models such as flux of particles and sticking coefficient (Sc), the effect of different particles on deposition and the step-coverage effect of trenches with different aspect ratios are studied.
Fangdong Yang Fuyun Zhu Min Yu Dayu Tian Haixia Zhang Yufeng Jin
National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, Peking University, Beijing 100871, China
国际会议
上海
英文
647-650
2011-08-08（万方平台首次上网日期，不代表论文的发表时间）