Junction Temperature Study During Degradation Process of High Power Light-Emitting Diodes

摘要：

High junction temperature accelerates the degradation of the chips and the package materials of high power light emitting diodes (LEDs). In this paper, two experiments were conducted to investigate the fluctuation of junction temperature in the aging process. At the ambient temperature of 65℃, the samples from four different types of LED packages were used to investigate the variation of junction temperature, and four kinds of impact factors were proposed to explain the changes with temperature. It can be found that the annealing effect of materials on the upper interface of the packaged LED was the most important factor for the declined junction temperature in the early accelerated aging process. In addition, the thermal mismatch between the epilayer of chip and the substrate of package raised junction temperature in the later aging time.

作者: Quan Chen Xiaobing Luo Run Chen Sang Wang Zhaohui Chen Sheng Liu

作者单位: School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuh Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan,

会议类型: 国际会议

会议名称: 2011 12th International Conference on Electronic Packaging Technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

会议地点: 上海

会议语种:英文

页码: 924-927

在线出版日期: 2011-08-08（万方平台首次上网日期，不代表论文的发表时间）