Study of mesa chemical etching for GaSb

摘要：

Different etching solutions were used in mesa etching for GaSb, all in which orthophosphoric acid system were effective. Then we proposed an improved etching solution that include tartaric acid, and proved that the etching solution was suitable for the mesa etching for GaSb.

作者: Rui-jun Dong Guo-jun Liu Te Li Zhan-guo Li

作者单位: National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Tech National Key Laboratory on High Power Semiconductor asers, Changchun University of Science and Techn

会议类型: 国际会议

会议名称: 1st International Conference on Frontiers of Laser Processing(第一届激光加工前沿国际会议 ICFL 2011)

会议地点: 长春

会议语种:英文

页码: 110-111

在线出版日期: 2011-07-11（万方平台首次上网日期，不代表论文的发表时间）