Ferroelectric Properties of Bi3.25Gd0.75Ti2.97V0.03O12
Bi3.25Gd0.75Ti2.97V0.03O12(BGTV)ceramic were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BGTV caused a large shift of the Curie temperature (TC) of Bi4Ti3O12 (BIT) from 675℃ to 398℃. The remanent polarization and the coercive field of the BGTV were 30uC/cm2 and 52kV/cm at an electric field of 87kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 0.003 at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BGTV are superior to V-doped Bi4Ti3O12(~20uC/cm2 and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12 (~12μC/cm2 and 71kV/cm) ceramics. In addition, the dense ceramics of BGTV could be obtained by sintering at temperatures 100-200℃ lower than those of the SrBi2Ta2O9 system.
C.Q.Huang M.Chen X.A.Mei Y.H.Sun J.Liu
School of Physics, Hunan Institute of Science and Technology, Yueyang, 414000, China
国际会议
长沙
英文
214-217
2011-06-30(万方平台首次上网日期,不代表论文的发表时间)