Effect of Atomic Oxygen Exposure on Polyhedral Oligomeric Silsesquioxane/Polyimide Hybrid Materials in Low Earth Orbit Environment
A novel polyimide (PI) hybrid nanocomposite containing polyhedral oligomeric silsesquioxane (POSS) had been prepared by copolymerization of octa(aminophenyl)silsesquioxane (OAP-POSS), 4,4 -oxydianiline (ODA), and pyromellitic dianhydride (PMDA). The AO resistance of these POSS/PI hybrid films was tested in the ground-based AO simulation facility. Exposed and unexposed surfaces have been characterized by X-ray photoelectron spectroscopy and FTIR. The XPS data indicate that the carbon content of the near-surface region is decreased from 63.6 to 19.3 at% after AO exposure. The oxygen and silicon concentrations in the near-surface region increase after AO exposure. The data reveal the formation of a passive inorganic SiO2 layer on the POSS/PI hybrid films during the AO exposure, which serves as a protective barrier preventing further degradation of the underlying polymer with increased exposure to the AO flux. SEM images showed that the surface of the 10 wt% POSS/PI became much less rough than that of the pristine polyimide. The AO resistance of the POSS/PI hybrid films is up to several tenfold than that of the pristine polyimide.
Shuwang Duo Mimi Song Tingzhi Liu Changyuan Hu Meishuan Li
Jiangxi Key Laboratory of Surface Engineering, Jiangxi Science & Technology Normal University, Nanch Jiangxi Key Laboratory of Surface Engineering, Jiangxi Science & Technology Normal University, Nanch Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of
国际会议
长沙
英文
521-524
2011-06-30（万方平台首次上网日期，不代表论文的发表时间）