Effects of Preparation Conditions on the Properties of AZO Thin Film Prepared by Sol-Gel Method
By growing AZO(Al-doped ZnO) thin film on quartz substrate through Sol-Gel, the properties of film are characterized by different preparation conditions. Comparing the UV-conductance response and transmittance of AZO films, the effects of preparation conditions on the electrical and optical properties of AZO films are figured out. The experimental result shows that AZO film which is prepared under the condition of 12% Al-doping concentration, 200℃ pre-treatment temperature and 450℃ annealing temperature possesses the optimum UV sensitivity (sheet resistance reduces 106. 3 times when be irradiated by UV light).
Shuai Li Feng Wang Wei Tian Wen Jun Yang
School of Optoelectronic Information University of Electronic Science and Technology of China, Chengdu, 610054, China
国际会议
International Conference on Micro/Nano Optical Engineering (纳米光学工程国际会议 ICOME 2011)
长春
英文
136-137
2011-06-12（万方平台首次上网日期，不代表论文的发表时间）