Influence of the thickness variation of the SiOx layer on the Si Quantum Dots based MOSLED

摘要：

The SiOx thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiOx thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiOx thickness of 385 nm has the maximum EL power of 469 nW.

作者: Bo-Han Lai Chih-Hsien Cheng Gong-Ru Lin

作者单位: Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 56-57

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）